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PD - 96891
AUTOMOTIVE MOSFET
IRF2804S-7P
Features
l l l l l
HEXFET(R) Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 40V
G S
RDS(on) = 1.6m ID = 160A
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
S (Pin 2, 3 ,5,6,7) G (Pin 1)
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current
Max.
320 230 160 1360 330 2.2 20 630 1050 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A
c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current
W W/C V mJ A mJ C
c
h
d
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
g
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Thermal Resistance
RJC RCS RJA RJA Junction-to-Case
j
Parameter
Typ.
--- 0.50
Max.
0.50 --- 62 40
Units
C/W
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
j
Junction-to-Ambient (PCB Mount, steady state)
ij
--- ---
HEXFET(R) is a registered trademark of International Rectifier.
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1
9/6/04
IRF2804S-7P
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS VDSS/TJ RDS(on) SMD VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
40 --- --- 2.0 220 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.028 1.2 --- --- --- --- --- --- 170 63 71 17 150 110 105 4.5 7.5 6930 1750 970 5740 1570 2340 --- --- 1.6 4.0 --- 20 250 200 -200 260 --- --- --- --- --- --- --- --- --- --- --- --- --- --- pF nH ns nC nA V m V S A
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 160A VDS = 10V, ID = 160A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 160A VDS = 32V VGS = 10V VDD = 20V ID = 160A RG = 2.6 VGS = 10V
V/C Reference to 25C, ID = 1mA VDS = VGS, ID = 250A
e
e d
Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
G
D
S
VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 32V, = 1.0MHz VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 43 48 1.3 65 72 V ns nC
Min. Typ. Max. Units
--- --- --- --- 320 A 1360
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 160A, VGS = 0V TJ = 25C, IF = 160A, VDD = 20V di/dt = 100A/s
e
e
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L=0.049mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90C.
2
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IRF2804S-7P
10000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
10000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
1000
BOTTOM
100
100
4.5V 60s PULSE WIDTH Tj = 175C
4.5V
10 0.1 1
60s PULSE WIDTH Tj = 25C
10 100
10 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
240
Gfs, Forward Transconductance (S)
TJ = 25C 200 160 120 80 40 0 0 20 40 60 80 100 120 140 ID, Drain-to-Source Current (A) TJ = 175C
ID, Drain-to-Source Current ()
100.0
TJ = 175C
10.0
1.0
TJ = 25C VDS = 20V
60s PULSE WIDTH
0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VDS = 10V
380s PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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3
IRF2804S-7P
14000 12000 10000 8000 6000 4000 2000 0 1 10 100 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20 ID= 160A
VGS, Gate-to-Source Voltage (V)
VDS = 32V VDS= 20V
16
C, Capacitance (pF)
Ciss
12
8
Coss Crss
4
0 0 50 100 150 200 250 300 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.0
10000
ID, Drain-to-Source Current (A)
TJ = 175C
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
100.0
1000 100sec
100
10.0
TJ = 25C
1.0
10 1msec 10msec DC 10 100 1000
1
VGS = 0V
0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4
Tc = 25C Tj = 175C Single Pulse 0 1
0.1
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF2804S-7P
350 300
ID , Drain Current (A)
2.0
250 200 150 100 50 0 25 50 75 100 125 150 175 TC , Case Temperature (C)
RDS(on) , Drain-to-Source On Resistance (Normalized)
LIMITED BY PACKAGE
ID = 160A VGS = 10V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Normalized On-Resistance vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 C 2
0.01
Ri (C/W) i (sec) 0.1951 0.000743 0.3050 0.008219
1
0.001
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF2804S-7P
2500
EAS, Single Pulse Avalanche Energy (mJ)
15V
2000
VDS
L
DRIVER
ID 21A 33A BOTTOM 160A
TOP
RG
VGS 20V
D.U.T
IAS tp
1500
+ V - DD
A
0.01
1000
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
500
0 25 50 75 100 125 150 175
Starting TJ, Junction Temperature (C)
I AS
Fig 12c. Maximum Avalanche Energy vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS VG QGD
4.5
VGS(th) Gate threshold Voltage (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175
Charge
Fig 13a. Basic Gate Charge Waveform
ID = 1.0A ID = 1.0mA ID = 250A
L
0
DUT 1K
VCC
TJ , Temperature ( C )
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage vs. Temperature
6
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IRF2804S-7P
10000
Duty Cycle = Single Pulse
1000
Avalanche Current (A)
100
0.01 0.05 0.10
10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
1
0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
800
EAR , Avalanche Energy (mJ)
600
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 160A
400
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f 175 ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy vs. Temperature
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7
IRF2804S-7P
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
VDS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
-VDD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
8
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IRF2804S-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
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9
IRF2804S-7P
D2Pak - 7 Pin Tape and Reel
IRF2804STRL-7P IRF2804STRL-7P IRF2804STRL-7P
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR's Web site.
10
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/04
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